SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 202-206

Elimination of sub-oxide transition regions at Si-SiO 2 interfaces by rapid thermal annealing at 900°C

(8) Lucovsky, G a Banerjee, A a Niimi, H a Koh, K a Hinds, B a Meyer, C b Lupke G b Kurz, H b

a NORTH CAROLINA STATE UNIVERSITY (United States)

b RWTH AACHEN UNIVERSITY (Germany)

Author keywords

Plasma processing; Rapid thermal annealing; Si SiO 2 interfaces; Sub oxide transition regions

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; KINEMATICS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SECOND HARMONIC GENERATION; SEMICONDUCTING SILICON; SILICA;

SUBOXIDE TRANSITION REGIONS;

INTERFACES (MATERIALS);

EID: 0031548650 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80079-7 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.