Studies of Mn/GaAs digital alloys using x-ray absorption fine structure and x-ray diffraction methods

Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2654-2656

  Soo, Y L ^a   Kioseoglou, G ^a   Kim, S ^a   Chen, X ^a   Luo, H ^a   Kao, Y H ^a   Sasaki, Y ^b   Liu, X ^b   Furdyna, J K ^b  

^a UNIVERSITY AT BUFFALO   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT THICKNESS; DIGITAL ALLOYS; GAAS; LOCAL STRUCTURE; MN ATOMS; VALENCIES; X RAY ABSORPTION FINE STRUCTURES; X-RAY ABSORPTION FINE STRUCTURE TECHNIQUES; X-RAY DIFFRACTION METHOD;

ATOMS; GALLIUM ARSENIDE; LATTICE CONSTANTS; MANGANESE; MANGANESE COMPOUNDS; MONOLAYERS; SEMICONDUCTING GALLIUM; X RAY ABSORPTION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 79956036209     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467982     Document Type: Article

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