Optimized digital alloy growth technique for accurate band gap engineering

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 163-165

  Geisselbrecht W ^a   Pfeiffer, U ^a   Thranhardt A ^b   Klutz U ^a   Gossard, A C ^c   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

COMPOSITIONAL GRADING; DIGITAL ALLOY GROWTH TECHNIQUE; PARABOLIC QUANTUM WELLS;

SEMICONDUCTOR GROWTH;

EID: 0344182472     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01318-9     Document Type: Article

References (8)

1. Harbison J.P., Peterson L.D., Levkoff J. J. Crystal Growth. 81:1987;34.
2. Miller R.C., Gossard A.C., Kleinmann D.A., Munteanu O. Phys. Rev. B. 29:1984;3740.
3. Wang S.M., Andersson T.G., Chen W.Q., Södervall U., Thordson J. J. Crystal Growth. 135:1994;455.
4. G. Bellomi, K. Campman, A.C. Gossard, N. Asmar, E.G. Gwinn, 1996, unpublished.
5. Sakaki H., Tsuchiya M., Yoshino J. Appl. Phys. Lett. 47:1985;295.
6. Vlaev S., García-Moliner F., Velasco V.R. Phys. Rev. B. 52:1995;13784.
7. Thränhardt A., Hader J., Koch S.W. Phys. Rev. B. 58:1998;1512.
8. W. Geißelbrecht, U. Klütz, U. Sahr, U. Pfeiffer, G.H. Döhler, K. Maranowski, K. Campman, A.C. Gossard, Proc. 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, August 1998, to be published.