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Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 1993-1995

Microstructural properties of Eu-doped GaN luminescent powders

(6) Contreras, O a Srinivasan, S a Ponce, F A a Hirata, G A b Ramos, F b McKittrick, J c

a ARIZONA STATE UNIVERSITY (United States)

b CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA (Mexico)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; POWDERS; SINGLE CRYSTALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

CRYSTALLINE STRUCTURE; EU-DOPED GAN; GAN POWDERS; LUMINESCENT POWDERS; MICRO-STRUCTURAL PROPERTIES; WURTZITES; ZINC BLENDE;

EUROPIUM COMPOUNDS;

EID: 79956032880 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1507355 Document Type: Article

Times cited : (29)

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