Intersubband transitions in proton irradiated In0.52Ga 0.48As/In0.52Al0.48As multiple quantum wells grown on semi-insulating InP substrate

Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3374-3376

  Zhou, Qiaoying ^a   Manasreh, M O ^a   Weaver, B D ^b   Missous, M ^c  

^a University of New Mexico   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DETRIMENTAL EFFECTS; GAAS/ALGAAS MQWS; INGAAS/INALAS; INP SUBSTRATES; INTERSUBBAND TRANSITIONS; IRRADIATED SAMPLES; PEAK POSITION; PROTON DOSE; SEMI-INSULATING; THERMAL-ANNEALING;

GALLIUM; PROTON IRRADIATION; PROTONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79956032507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519726     Document Type: Article

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