Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4454, Issue , 2001, Pages 85-93

  Berhane, Y ^a   Manasreh, M O ^a   Weaver, B D ^b   Tan, H H ^c   Jagadish, Chennupati ^c  

^a University of New Mexico   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; DOSIMETRY; ELECTRON TRANSITIONS; HYDROGEN; IONS; OPTICAL MICROSCOPY; PROTONS; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; INTERSUBBAND TRANSITION; MULTIPLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035761287     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.448163     Document Type: Article

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