Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 525-527

  Manasreh, M O ^a   Ballet, P ^b   Smathers, J B ^b   Salamo, G J ^b   Jagadish, Chennupati ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; LIGHT ABSORPTION; LOW TEMPERATURE EFFECTS; PROTON IRRADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

ALUMINUM GALLIUM ARSENIDE; INTERSUBBAND TRANSITION; SUPERLATTICE BARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032620506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124436     Document Type: Article

References (7)

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