Amorphous silicon thin-film transistors and arrays fabricated by jet printing

Applied Physics Letters

Volumn 80, Issue 4, 2002, Pages 610-612

  Wong, W S ^a   Ready, S ^a   Matusiak, R ^a   White, S D ^a   Lu, J P ^a   Ho, J ^a   Street, R A ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON THIN-FILM TRANSISTOR; CHANNEL LENGTH; CONVENTIONAL PHOTOLITHOGRAPHY; JET PRINTING; MATRIX; MINIMUM FEATURE SIZES; ON/OFF RATIO; PHASE CHANGES; SOURCE-DRAIN CONTACTS;

AMORPHOUS FILMS; CURRENT VOLTAGE CHARACTERISTICS; PHOTOLITHOGRAPHY; PRINTING; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 79956029129     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436273     Document Type: Article

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