Formation mechanism of the multilayered-structure barrier of WN x/Si(100)

Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4339-4341

  Choi, I S ^a   Park, J C ^a   Choi, J T ^a   Kim, H J ^a   Lee, S Y ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL BONDING STATE; FORMATION MECHANISM; INTERFACIAL LAYER; INTERFACIAL OXIDE LAYERS; MULTI-LAYERED STRUCTURE; OXIDE LAYER; SI(1 0 0); SILICIDATION; ULTRA-THIN;

CHEMICAL BONDS; RAPID THERMAL ANNEALING; SILICON NITRIDE; SILICON OXIDES;

SILICON;

EID: 79956019853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484542     Document Type: Article

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