메뉴 건너뛰기




Volumn 81, Issue 10, 2002, Pages 1756-1758

Scaling quantum-dot light-emitting diodes to submicrometer sizes

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; ACTIVE REGIONS; CARRIER CONFINEMENTS; DEVICE STRUCTURES; FABRICATION TECHNIQUE; INAS QUANTUM DOTS; LIGHT-CURRENT-VOLTAGE CHARACTERISTICS; ROOM TEMPERATURE; SCALING BEHAVIOR; SELECTIVE OXIDATION; SUBMICROMETERS;

EID: 79956012327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504880     Document Type: Article
Times cited : (47)

References (16)
  • 6
    • 0000692944 scopus 로고
    • jaJAPIAU 0021-8979
    • N. K. Dutta, J. Appl. Phys. 68, 1961 (1990). jap JAPIAU 0021-8979
    • (1990) J. Appl. Phys. , vol.68 , pp. 1961
    • Dutta, N.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.