Effect of domain structure on thermal stability of nanoscale ferroelectric domains

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 4000-4002

  Woo, Jungwon ^a   Hong, Seungbum ^b   Min, Dong Ki ^b   Shin, Hyunjung ^b   No, Kwangsoo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; DATA BITS; DOMAIN STRUCTURE; FERROELECTRIC DOMAINS; HIGHER TEMPERATURES; NANO SCALE; NANOSIZE DOMAINS; PIEZOELECTRIC FORCE MICROSCOPY; PULSE WIDTH; RAPID COOLING; RETENTION LOSS; RING STRUCTURES; ROOM TEMPERATURE; STABLE FORM;

FERROELECTRICITY; LANTHANUM COMPOUNDS; LEAD; ZIRCONIUM;

THERMODYNAMIC STABILITY;

EID: 79956012247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481537     Document Type: Article

References (7)

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2. J. Woo, S. Hong, N. Setter, H. Shin, J.-U. Jeon, Y. E. Pak, and K. No, J. Vac. Sci. Technol. B 19, 818 (2001). jvb JVTBD9 0734-211X
3. P. Paruch, T. Tybell, and J.-M. Triscone, Appl. Phys. Lett. 79, 530 (2001). apl APPLAB 0003-6951
4. Ref. 3 used 40 nm thick film (private communication) and 40 nm bits, which implies that our previous conclusion that minimum stable bit size equals the film thickness applies to other studies.
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