Detailed defect study in proton irradiated InP/Si solar cells

Journal of Applied Physics

Volumn 86, Issue 7, 1999, Pages 3584-3589

  Walters, R J ^a   Romero, M J ^b   Araujo D ^b   Garcia R ^b   Messenger, S R ^c   Summers, G P ^a,d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF CÁDIZ   (Spain)

^c SFA INC   (United States)

^d UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; INDUCED CURRENTS; PROTONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; VOLTAGE MEASUREMENT;

ELECTRON BEAM INDUCED CURRENTS (EBIC); PROTON IRRADIATION-INDUCED DEFECTS;

SOLAR CELLS;

EID: 0032621423     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371262     Document Type: Article

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