Radiation response and injection annealing of P+N InGaP solar cells

Solid-State Electronics

Volumn 42, Issue 9, 1998, Pages 1747-1756

  Walters, R J ^a   Xapsos, M A ^a   Cotal, H L ^a   Messenger, S R ^b   Summers, G P ^a,c   Sharps, P R ^d   Timmons, M L ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^d RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; PROTONS; QUANTUM EFFICIENCY; RADIATION EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

INJECTION ANNEALING; RADIATION RESPONSE;

SOLAR CELLS;

EID: 0032165156     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00139-7     Document Type: Article

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