Synchrotron-radiation-induced wet etching of germanium

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1741-1743

  Ma, Qing ^a   Moldovan, Nicolaie ^a   Mancini, Derrick C ^a   Rosenberg, Richard A ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL WET ETCHING PROCESS; ETCHING CONDITION; GE SURFACES; GE WAFER; PHOTO-INDUCED; ROOM TEMPERATURE; ROOT MEAN SQUARES; SOLUTION CONCENTRATION; SYNCHROTRON RADIATION SOURCE; X RAY BEAM;

GERMANIUM; NITRIC ACID; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; SYNCHROTRONS;

WET ETCHING;

EID: 79955999977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499530     Document Type: Article

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