Sample size effect in photoelectrochemical etching of n-GaAs

Applied Physics Letters

Volumn 77, Issue 9, 2000, Pages 1319-1321

  Ma, Qing ^a   Moldovan, Nicolaie ^a   Mancini, Derrick C ^a   Rosenberg, Richard A ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346008469     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289908     Document Type: Article

References (11)

1. W. W. Gartner, Phys. Rev. 116, 84 (1959).
2. J. Reichman, Appl. Phys. Lett. 36, 574 (1980).
3. M. A. Butler, J. Appl. Phys. 48, 1914 (1977).
4. J. H. Kennedy and K. W. Frese, J. Electrochem. Soc. 125, 723 (1978).
5. A. E. Willner, D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood, Jr., Appl. Phys. Lett. 53, 1198 (1988).
6. Q. Ma, D. C. Mancini, and R. A. Rosenberg, Appl. Phys. Lett. 75, 2274 (1999).
7. B. Lai, D. C. Mancini, W. Yun, and E. Gluskin, Proc. SPIE 2880, 171 (1996).
8. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
9. J. M. West, Electrodeposition and Corrosion Process (VNR, London, 1970).
10. M. N. Ruberto, X. Zhang, R. Scarmozzino, A. E. Willner, D. V. Podlesnik, and R. M. Osgood, Jr., J. Electrochem, Soc. 138, 1174 (1991).
11. F. Berz, J. Appl. Phys. 50, 4479 (1979).