Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber

Electronics Letters

Volumn 35, Issue 2, 1999, Pages 150-152

  Khoo, E A ^a   Woodhead, J ^a   David, J P R ^a   Grey, R ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; LIGHT ABSORPTION; OPTICAL BISTABILITY; PIEZOELECTRIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SATURABLE ABSORBERS;

QUANTUM WELL LASERS;

EID: 0032678320     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990088     Document Type: Article

References (7)

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3. KAWAGUCHI, H.: 'Progress in optical functional devices using two-section laser diodes/amplifiers', IEE Proc. J. Optoelectron., 1993, 140, (1), pp. 3-15
4. YAMADA, N., and HARRIS, J.S., Jr.: 'Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing', Appl. Phys. Lett., 1992, 60, (20), pp. 2463-2465
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7. BEN-MICHAEL, R., FEKETE, D., and SARFATY, R.: 'Quantum well width and In composition effects on the operating characteristics of InGaAs/GaAs strained single quantum well diode lasers', Appl. Phys. Lett., 1991, 59, (21), pp. 3219-3221