Balanced electronic detection of displacement in nanoelectromechanical systems

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2253-2255

  Ekinci, K L ^a   Yang, Y T ^a   Huang, X M H ^a   Roukes, M L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND RADIO; DC MAGNETIC FIELD; ELECTROMECHANICAL RESONANCES; ELECTRONIC DETECTION; EXPERIMENTAL SYSTEM; HIGH FREQUENCY; NANO ELECTROMECHANICAL SYSTEMS; STATIC BACKGROUND; VERY HIGH FREQUENCY;

ELECTROMOTIVE FORCE; MAGNETIC FIELDS;

NEMS;

EID: 79955996608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507833     Document Type: Article

References (17)

1. M. L. Roukes, Phys. World 14, 25 (2001). phw PHWOEW 0953-8585
2. D. S. Greywall, B. Yurke, P. A. Busch, A. N. Pargellis, and R. L. Willett, Phys. Rev. Lett. 72, 2992 (1992). prl PRLTAO 0031-9007
3. R. E. Mihailovich and J. M. Parpia, Phys. Rev. Lett. 68, 3052 (1994). prl PRLTAO 0031-9007
4. W. C. Tang, T. C. H. Nguyen, M. W. Judy, and R. T. Howe, Sens. Actuators A 21, 328 (1990). sac SAAPEB 0924-4247
5. M. Tortonose, R. C. Barret, and C. F. Quate, Appl. Phys. Lett. 62, 834 (1993). apl APPLAB 0003-6951
6. A. N. Cleland and M. L. Roukes, Appl. Phys. Lett. 69, 2653 (1996). apl APPLAB 0003-6951
7. A. N. Cleland and M. L. Roukes, Sens. Actuators A 72, 256 (1999). sac SAAPEB 0924-4247
8. e∼100-1k.
9. Y. T. Yang, K. L. Ekinci, X. M. H. Huang, L. M. Schiavone, M. L. Roukes, C. A. Zorman, and M. Mehregany, Appl. Phys. Lett. 78, 162 (2001). apl APPLAB 0003-6951
10. e), giving a correction to the background on the order of -20logΓdB.
11. Y. T. Yang, K. L. Ekinci, and M. L. Roukes (unpublished).
12. L. Pescini, A. Tilke, R. H. Blick, H. Lorenz, J. P. Kotthaus, W. Eberhardt, and D. Kern, Nanotechnology 10, 418 (1999). nno NNOTER 0957-4484
13. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
14. S would produce the more general form.
15. We have qualitatively compared Q factors of eight metallized and 14 doped Si beams measured in different experimental runs, spanning the indicated frequency range.
16. X. Liu, E. Thompson, B. E. White, Jr., and R. O. Pohl, Phys. Rev. B 59, 11767 (1999). prb PRBMDO 0163-1829
17. K. Y. Yasumura, T. D. Stowe, E. M. Chow, T. Pfafman, T. W. Kenny, B. C. Stipe, and D. Rugar, J. Microelectromech. Syst. 9, 117 (2000). jiy JMIYET 1057-7157