Proof of kinetic influence in Ge nanowire formation on Si(1 1 3)

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 III, 2002, Pages 1904-1908

  Sumitomo, K ^a   Zhang, Z ^a   Omi, H ^a   Bottomley, D J ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A1. Stresses; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting silicon

Indexed keywords

ANISOTROPY; ANNEALING; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WIRES; SURFACE STRUCTURE;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 18244413916     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02243-6     Document Type: Article

References (11)