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Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 987-991

Theoretical study of electronic structure and thermoelectric properties of doped CuAlO 2

(4) Poopanya, P a Yangthaisong, A a Rattanapun, C b Wichainchai, A b

a UBON RATCHATHANI UNIVERSITY (Thailand)

b KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG (Thailand)

Author keywords

delafossite CuAlO 2; first principles; Thermoelectric properties

Indexed keywords

ACCEPTOR DOPING; DELAFOSSITES; DOPING LEVELS; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT; ENERGY BAND STRUCTURE; FIRST PRINCIPLES; HIGH TEMPERATURE; INDIRECT BAND GAP; INTERNAL PARAMETERS; LATTICE PARAMETERS; PLANE-WAVE PSEUDOPOTENTIAL METHOD; POWER FACTORS; SCATTERING TIME; THEORETICAL STUDY; THERMOELECTRIC OXIDE MATERIALS; THERMOELECTRIC PROPERTIES; TOTAL ENERGY;

BAND STRUCTURE; COPPER COMPOUNDS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; LATTICE CONSTANTS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

DOPING (ADDITIVES);

EID: 79955924215 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1475-y Document Type: Conference Paper

Times cited : (13)

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