SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 1150-1157

Effects of cooling rate on thermoelectric properties of n-type Bi 2(Se 0.4Te 0.6) 3 compounds

(5) Wang, S Y a Xie, W J a Li, H a Tang, X F a Zhang, Q J a

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Bismuth telluride; cooling rate; rapid preparation; thermoelectric properties

Indexed keywords

BISMUTH TELLURIDE; COOLING RATE; COOLING RATES; ELECTRICAL CONDUCTIVITY; ELECTRONS AND PHONONS; FORBIDDEN GAPS; INFRARED SPECTRUM; MEASUREMENT RESULTS; RAPID PREPARATION; SIGNIFICANT IMPACTS; TEMPERATURE RANGE; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES;

BISMUTH; COOLING; ELECTRIC CONDUCTIVITY; MELT SPINNING; SEMICONDUCTING SELENIUM COMPOUNDS; SPARK PLASMA SINTERING; SPECTROSCOPY; TELLURIUM; TELLURIUM COMPOUNDS; TELLURIUM DEPOSITS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSPORT PROPERTIES;

BISMUTH COMPOUNDS;

EID: 79955880515 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1559-3 Document Type: Conference Paper

Times cited : (18)

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