Growth of GaN single crystals by a Ca- and Ba-added Na flux method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7939, Issue , 2011, Pages

  Ukegawa, H ^a   Konishi, Y ^a   Fujimori, T ^a   Miyoshi, N ^a   Imade, M ^a   Yoshimura, M ^a   Kitaoka, Y ^a   Sasaki, T ^a   Mori, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ba; Ca; crystal growth; GaN; habit; impurity; nitride

Indexed keywords

BA; BULK CRYSTALS; CA; DETECTION LIMITS; FLUX METHODS; GAN; GAN SUBSTRATE; GROWTH HABIT; GROWTH OF GAN; HABIT; HIGH QUALITY; HIGH-FREQUENCY TRANSISTORS; HIGH-POWER; IMPURITY CONCENTRATION; PYRAMIDAL SHAPE; ULTRA-VIOLET;

ASPECT RATIO; BARIUM; CALCIUM; CRYSTAL GROWTH; CRYSTAL IMPURITIES; GALLIUM ALLOYS; GALLIUM NITRIDE; SODIUM;

SINGLE CRYSTALS;

EID: 79955753770     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.875824     Document Type: Conference Paper

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