Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 12, 2009, Pages

  Santori, Charles ^a   Barclay, Paul E ^a   Fu, Kai Mei C ^a   Beausoleil, Raymond G ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64849086690     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.125313     Document Type: Article

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