Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

Chinese Physics B

Volumn 20, Issue 3, 2011, Pages

  Sun, Guo Sheng ^a,b   Liu, Xing Fang ^a   Wu, Hai Lei ^a   Yan, Guo Guo ^a   Dong, Lin ^a   Zheng, Liu ^a   Zhao, Wan Shun ^a   Wang, Lei ^a   Zeng, Yi Ping ^a   Li, Xi Guang ^b   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Dongguan Tianyu Semiconductor Inc   (China)

Author keywords

4H SiC; LOPC modes; Raman scattering; transport properties

Indexed keywords

4H-SIC; 4H-SIC SUBSTRATE; FREE CARRIER DENSITY; FREQUENCY SHIFT; HALL EFFECT MEASUREMENT; HORIZONTAL REACTORS; LONGITUDINAL OPTICS; LOPC MODES; MASS PRODUCTION; NON DESTRUCTIVE; POTENTIAL TECHNIQUES; RAMAN SCATTERING MEASUREMENTS; SIC EPILAYERS; VERTICAL REACTOR;

CARRIER CONCENTRATION; EPILAYERS; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SUBSTRATES; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955667875     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/3/033301     Document Type: Article

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