SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 20, 2011, Pages 7090-7097

Fabrication and characterization of well-aligned, high density ZnO nanowire arrays and their realizations in Schottky device applications using a two-step approach

(5) Wen, Liaoyong a Wong, Kin Mun a Fang, Yaoguo b Wu, Minghong b Lei, Yong a

a UNIVERSITY OF MÜNSTER (Germany)

b SHANGHAI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR SUBSTRATES; DRY CONTACT; ELECTRICAL CONTACTS; FLEXIBLE POLYMER SUBSTRATES; HIGH DENSITY; MODIFIED CHEMICAL VAPOR DEPOSITIONS; NON-LINEAR CURRENT-VOLTAGE CHARACTERISTICS; PHOTOLITHOGRAPHIC PROCESS; POTENTIAL GRADIENTS; RAPID GROWTH; SCHOTTKY CONTACTS; SCHOTTKY DEVICES; SCHOTTKY DIODES; SPONTANEOUS POLARIZATIONS; SURFACE STATE; TWO-STEP APPROACH; WELL-ALIGNED; ZINC OXIDE NANOWIRES; ZNO; ZNO NANOWIRE ARRAYS; ZNO NWS;

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; ELECTRIC WIRE; NANOWIRES; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES;

ZINC OXIDE;

EID: 79955626284 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm10496a Document Type: Article

Times cited : (38)

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