Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors

Solid State Communications

Volumn 151, Issue 11, 2011, Pages 838-841

  Rouabah, Z ^a   Bouzid, A ^a   Champion, C ^b   Bouarissa, N ^c  

^a UNIVERSITY OF BORDJ BOU ARRERIDJ   (Algeria)

^b UNIVERSITÉ DE LORRAINE   (France)

^c KING KHALID UNIVERSITY   (Saudi Arabia)

Author keywords

A. Semiconductors; C. Electron backscattering; C. Low energy electron; D. Electron range

Indexed keywords

ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GALLIUM ARSENIDE; GALLIUM NITRIDE; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SILICON COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

ANALYTICAL EXPRESSIONS; BACKSCATTERING COEFFICIENTS; COMPOUND SEMICONDUCTORS; D. ELECTRON RANGE; ELECTRON BACKSCATTERING; ELECTRON TRANSPORT; ENERGY RELATIONSHIPS; LOW ENERGY ELECTRONS;

BACKSCATTERING;

EID: 79955596192     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.03.019     Document Type: Article

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