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Materials Chemistry and Physics

Volumn 73, Issue 1, 2002, Pages 51-56

Pressure dependence of optoelectronic properties of GaN in the zinc-blende structure

(1) Bouarissa, N a,b

a ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS (Italy)

b UNIVERSITY OF M'SILA (Algeria)

Author keywords

GaN; Pressure; Zinc blende

Indexed keywords

ENERGY GAP; OPTOELECTRONIC DEVICES; PERMITTIVITY; PRESSURE EFFECTS; REFRACTIVE INDEX;

ZINC-BLENDE STRUCTURES;

GALLIUM NITRIDE;

EID: 0037005645 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(01)00347-9 Document Type: Article

Times cited : (58)

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