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Solid State Communications

Volumn 151, Issue 11, 2011, Pages 850-854

Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B

(5) Adell, J a Ulfat, I a,b Sadowski, J c,d Ilver, L a Kanski, J a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b UNIVERSITY OF KARACHI (Pakistan)

c INSTITUTE OF PHYSICS (Poland)

d LUND UNIVERSITY (Sweden)

Author keywords

A. Diluted magnetic semiconductors; B. MBE; D. Nanowire development; E. Photoemission

Indexed keywords

AUGER DECAYS; B. MBE; D. NANOWIRE DEVELOPMENT; DILUTED MAGNETIC SEMICONDUCTORS; E. PHOTOEMISSION; EXCITATION THRESHOLD; GAAS; GRADUAL CHANGES; PHOTON ENERGY; RESONANT PHOTOEMISSION; SPECTROSCOPIC STUDIES; VALENCE BAND PHOTOEMISSION;

EMISSION SPECTROSCOPY; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE COMPOUNDS; PHOTOEMISSION; SPECTROSCOPIC ANALYSIS;

NANOWIRES;

EID: 79955579903 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2011.02.033 Document Type: Article

Times cited : (7)

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