Effect of rapid thermal annealing on pentacene-based thin-film transistors

Solid-State Electronics

Volumn 61, Issue 1, 2011, Pages 76-80

  Chou, D W ^a   Huang, C J ^b,e   Su, C M ^c   Yang, C F ^b   Chen, W R ^d   Meen, T H ^d  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^e NONE   (Taiwan)

Author keywords

Annealing; Electrical properties; Thin film; X ray diffraction technique

Indexed keywords

ANNEALED TEMPERATURE; ANNEALING TEMPERATURES; BOTTOM-CONTACT PENTACENE; CRYSTAL PHASE; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; GRAIN SIZE; MOLECULAR ORDERING; ON/OFF CURRENT RATIO; PENTACENE FILM; PENTACENES; POST ANNEALING TREATMENT; X-RAY DIFFRACTION TECHNIQUE; X-RAY DIFFRACTION TECHNIQUES; XRD;

DIFFRACTION; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; X RAY DIFFRACTION; X RAYS;

THIN FILM TRANSISTORS;

EID: 79955577214     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.003     Document Type: Article

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