High aspect-ratio ZnO nanowires based nanoscale field effect transistors

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 4, 2009, Pages 2692-2697

  Umar, Ahmad ^a   Park, Y K ^a   Hahn, Y B ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Field effect transistor; ZnO nanowires

Indexed keywords

AS-GROWN; C-AXIS DIRECTION; COPPER FOILS; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON CARRIER DENSITY; FIELD-EFFECT MOBILITIES; HEXAGONAL PHASE; HIGH ASPECT RATIO; MORPHOLOGICAL OBSERVATIONS; NANOSCALE FIELD-EFFECT TRANSISTORS; NON-CATALYTIC; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL CHARACTERIZATION; THERMAL EVAPORATION METHOD; UV EMISSIONS; WURTZITE; ZNO NANOWIRES;

ASPECT RATIO; CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRIC WIRE; ELECTRON MULTIPLIERS; EMISSION SPECTROSCOPY; MESFET DEVICES; NANOWIRES; OPTICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EVAPORATION; TRANSPORT PROPERTIES; ZINC OXIDE; ZINC SULFIDE;

FIELD EFFECT TRANSISTORS;

EID: 67349109782     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.460     Document Type: Article

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