Low-voltage operation of ink-jet-printed single-walled carbon nanotube thin film transistors

Japanese Journal of Applied Physics

Volumn 49, Issue 2 PART 2, 2010, Pages

  Okimoto, Haruya ^a   Takenobu, Taishi ^a   Yanagi, Kazuhiro ^b,c   Shimotani, Hizekazu ^a   Miyata, Yasumitsu ^b   Kataura, Hiromichi ^b,c   Iwasa, Yoshihiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRIC LAYERS; HYSTERETIC RESPONSE; INK-JET; LOW VOLTAGE OPERATION; LOW-VOLTAGE; OPERATING VOLTAGE; SOURCE/DRAIN ELECTRODES; TRANSISTOR CHANNELS;

GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; INK; INK JET PRINTING; IONIC LIQUIDS; SEMICONDUCTING FILMS; THIN FILM TRANSISTORS; THIN FILMS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 79955528347     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.02BD09     Document Type: Article

References (16)

1. Carbon Nanotubes: Synthesis, Structure Properties and Applications, ed. M. Dresselhaus, G. Dresselhaus, and Ph. Avouris (Springer, Berlin, 2001).
2. T. Durkop, S. A. Getty, E. Cobas, and M. S. Fuhrer: Nano Lett. 4 (2004) 35.
3. Z. Yao, C. L. Kane, and C. Dekker: Phys. Rev. Lett. 84 (2000) 2941.
4. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai: Nat. Mater. 1 (2002) 241.
5. S. J. Kang, C. Kocabas, T. Ozel, M. Shim, N. Pimparkar, M. A. Alam, S. V. Rotkin, and J. A. Rogers: Nat. Nanotechnol. 2 (2007) 230.
6. M. C. LeMieux, M. Roberts, S. Barman, Y. W. Jin, J. M. Kim, and Z. N. Bao: Science 321 (2008) 101.
7. J. P. Novak, E. S. Snow, E. J. Houser, D. Park, J. L. Stepnowski, and R. A. McGill: Appl. Phys. Lett. 83 (2003) 4026.
8. Z. C. Wu, Z. H. Chen, X. Du, J. M. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. R. Reynolds, D. B. Tanner, A. F. Hebard, and A. G. Rinzler: Science 305 (2004) 1273.
9. T. Takenobu, N. Miura, S. Y. Lu, H. Okimoto, T. Asano, M. Shiraishi, and Y. Iwasa: Appl. Phys. Express 2 (2009) 025005.
10. H. Okimoto, T. Takenobu, K. Yanagi, Y. Miyata, H. Kataura, T. Asano, and Y. Iwasa: Jpn. J. Appl. Phys. 48 (2009) 06FF03.
11. H. Okimoto, T. Takenobu, K. Yanagi, Y. Miyata, H. Kataura, and Y. Iwasa: in preparation.
12. J. H. Cho, J. Lee, Y. Xia, B. Kim, Y. Y. He, M. J. Renn, T. P. Lodge, and C. D. Frisbie: Nat. Mater. 7 (2008) 900.
13. H. T. Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki, and Y. Iwasa: Adv. Funct. Mater. 19 (2009) 1046.
14. T. Ozel, A. Gaur, J. A. Rogers, and M. Shim: Nano Lett. 5 (2005) 905.
15. W. Kim, A. Javey, O. Vermesh, O. Wang, Y. M. Li, and H. J. Dai: Nano Lett. 3 (2003) 193.
16. K. Tsukagoshi, M. Sekiguchi, Y. Ayagi, T. Kanbara, T. Takenobu, and Y. Iwasa: Jpn. J. Appl. Phys. 46 (2007) L571.