Microstructural analysis of the deformation range under nano-indentation in β-SiC

Journal of Electron Microscopy

Volumn 53, Issue 5, 2004, Pages 515-517

  Kishimoto, Hirotatsu ^a   Park, Kyeong Hwan ^b   Kondo, Sosuke ^b   Ozawa, Kazumi ^b   Kohyama, Akira ^b  

^a Santa Barbara   (United States)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

FIB; Irradiation effects; Nano indentation; SiC; TEM

Indexed keywords

SILICON DERIVATIVE;

ARTICLE; LABORATORY DIAGNOSIS; METHODOLOGY; RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

MICROSCOPY, ELECTRON, TRANSMISSION; RADIATION; SILICON COMPOUNDS; SPECIMEN HANDLING;

ION BEAMS; IONS; IRRADIATION; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED IONS BEAMS; ION BEAM METHOD; IRRADIATION EFFECT; MICROSTRUCTURAL ANALYSIS; MOVING DISLOCATION; NANO INDENTATION; NANOINDENTATION TESTS; RADIATION INDUCED DEFECTS; TEM; Β- SIC;

SILICON CARBIDE;

EID: 13444291805     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh073     Document Type: Article

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