SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

Transparent oxide thin-film transistors using n-(In2O 3)0:9(SnO2)0:1/InGaZnO4 modulation-doped heterostructures

(4) Taniguchi, Satoshi a Yokozeki, Mikihiro a Ikeda, Masao a Suzuki, Toshi Kazu b

a SONY CORPORATION (Japan)

b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION-BAND MINIMUM; ENERGY BAND; HETEROSTRUCTURES; HIGH CARRIER MOBILITY; MOBILITY ENHANCEMENT; MODULATION DOPING; MODULATION-DOPED; PERFORMANCE IMPROVEMENTS; TRANSMITTANCE MEASUREMENTS; TRANSPARENT OXIDE SEMICONDUCTOR; TRANSPARENT OXIDES; TWO-DIMENSIONAL BEHAVIOR; UV PHOTOEMISSION; VALENCE-BAND MAXIMUMS; VAN DER PAUW HALL MEASUREMENTS;

CRYSTALS; ELECTRON ABSORPTION; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MODULATION; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

HETEROJUNCTIONS;

EID: 79955421079 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.04DF11 Document Type: Article

Times cited : (34)

References (17)

1
- 9744248669
- K. Nomura, H. Ohata, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono: Nature 432 (2004) 488.
- (2004) Nature , vol.432 , pp. 488
- Nomura, K.¹ Ohata, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 79951897759
- T. Arai, N. Morosawa, K. Tokunaga, Y. Terai, E. Fukumoto, T. Fujimori, T. Nakayama, T. Yamaguchi, and T. Sasaoka: SID Int. Symp. Dig. Tech. Pap. 41 (2010) 1033.
- (2010) SID Int. Symp. Dig. Tech. Pap. , vol.41 , pp. 1033
- Arai, T.¹ Morosawa, N.² Tokunaga, K.³ Terai, Y.⁴ Fukumoto, E.⁵ Fujimori, T.⁶ Nakayama, T.⁷ Yamaguchi, T.⁸ Sasaoka, T.⁹

3
- 66749143525
- J. M. Lee, I. T. Cho, J. H. Lee, W. S. Cheong, C. S. Hwang, and H. I. Kwon: Appl. Phys. Lett. 94 (2009) 222112.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 222112
- Lee, J.M.¹ Cho, I.T.² Lee, J.H.³ Cheong, W.S.⁴ Hwang, C.S.⁵ Kwon, H.I.⁶

4
- 33744460748
- K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono: Jpn. J. Appl. Phys. 45 (2006) 4303.
- (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 4303
- Nomura, K.¹ Takagi, A.² Kamiya, T.³ Ohta, H.⁴ Hirano, M.⁵ Hosono, H.⁶

5
- 48249112642
- D. H. Kim, N. G. Cho, H. G. Kim, H. S. Kim, J. M. Hong, and I. D. Kim: Appl. Phys. Lett. 93 (2008) 032901.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 032901
- Kim, D.H.¹ Cho, N.G.² Kim, H.G.³ Kim, H.S.⁴ Hong, J.M.⁵ Kim, I.D.⁶

6
- 58149145296
- W. Lim, E. A. Douglas, S. H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, and W. H. Chang: Appl. Phys. Lett. 93 (2008) 252103.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 252103
- Lim, W.¹ Douglas, E.A.² Kim, S.H.³ Norton, D.P.⁴ Pearton, S.J.⁵ Ren, F.⁶ Shen, H.⁷ Chang, W.H.⁸

7
- 77649122278
- T. Kamiya, K. Nomura, and H. Hosono: J. Disp. Technol. 5 (2009) 273.
- (2009) J.Disp.Technol. , vol.5 , pp. 273
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

8
- 36749106768
- R. Dingle, H. L. Stormer, A. C. Gossard, and W. Wiegmann: Appl. Phys. Lett. 33 (1978) 665.
- (1978) Appl. Phys. Lett. , vol.33 , pp. 665
- Dingle, R.¹ Stormer, H.L.² Gossard, A.C.³ Wiegmann, W.⁴

9
- 84951490594
- T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu: Jpn. J. Appl. Phys. 19 (1980) L225.
- (1980) Jpn. J. Appl. Phys. , vol.19
- Mimura, T.¹ Hiyamizu, S.² Fujii, T.³ Nanbu, K.⁴

10
- 0344083451
- J. J. Robbins and C. A. Wolden: Appl. Phys. Lett. 83 (2003) 3933.
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3933
- Robbins, J.J.¹ Wolden, C.A.²

11
- 24044451524
- T. Kamiya and H. Hosono: Int. J. Appl. Ceram. Technol. 2 (2005) 285.
- (2005) Int. J. Appl. Ceram. Technol. , vol.2 , pp. 285
- Kamiya, T.¹ Hosono, H.²

12
- 42549142122
- A. Walsh, J. L. F. Da Silva, S.-H. Wei, C. KÖrber, A. Klein, L. F. J. Piper, A. DeMasi, K. E. Smith, G. Panaccione, P. Torelli, D. J. Payne, A. Bourlange, and R. G. Egdell: Phys. Rev. Lett. 100 (2008) 167402.
- (2008) Phys. Rev. Lett. , vol.100 , pp. 167402
- Walsh, A.¹ Da Silva, J.L.F.² Wei, S.-H.³ Körber, C.⁴ Klein, A.⁵ Piper, L.F.J.⁶ DeMasi, A.⁷ Smith, K.E.⁸ Panaccione, G.⁹ Torelli, P.¹⁰ Payne, D.J.¹¹ Bourlange, A.¹² Egdell, R.G.¹³

13
- 85032069152
- T. Ando, A. B. Fowler, and F. Stern: Rev. Mod. Phys. 54 (1982) 437.
- (1982) Rev. Mod. Phys. , vol.54 , pp. 437
- Ando, T.¹ Fowler, A.B.² Stern, F.³

14
- 43049114999
- H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya: J. Non-Cryst. Soilds 354 (2008) 2796.
- (2008) J. Non-Cryst. Soilds , vol.354 , pp. 2796
- Hosono, H.¹ Nomura, K.² Ogo, Y.³ Uruga, T.⁴ Kamiya, T.⁵

15
- 42649117785
- H. Q. Chiang, B. R. McFarlane, D. Hong, R. E. Presley, and J. F. Wager: J. Non-Cryst. Soilds 354 (2008) 2826.
- (2008) J.Non-Cryst. Soilds , vol.354 , pp. 2826
- Chiang, H.Q.¹ McFarlane, B.R.² Hong, D.³ Presley, R.E.⁴ Wager, J.F.⁵

16
- 38349125119
- H.-J. Chung, J. H. Jeong, T. K. Ahn, H. J. Lee, M. Kim, K. Jun, J.-S. Park, J. K. Jeong, Y.-G. Mo, and H. D. Kim: Electrochem. Solid-State Lett. 11 (2008) H51.
- (2008) Electrochem. Solid-State Lett. , vol.11
- Chung, H.-J.¹ Jeong, J.H.² Ahn, T.K.³ Lee, H.J.⁴ Kim, M.⁵ Jun, K.⁶ Park, J.-S.⁷ Jeong, J.-S.⁸ Mo, Y.-G.⁹ Kim, H.D.¹⁰

17
- 0026390022
- C. C. Eugster, T. P. E. Broekaert, J. A. D. Alamo, and C. G. Fonstad: IEEE Electron Device Lett. 12 (1991) 707.
- (1991) IEEE Electron Device Lett. , vol.12 , pp. 707
- Eugster, C.C.¹ Broekaert, T.P.E.² Alamo, J.A.D.³ Fonstad, C.G.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.