Separation of thin GaN from sapphire by laser lift-off technique

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 1, 2011, Pages

  Ueda, Tetsuzo ^a   Ishida, Masahiro ^a   Yuri, Masaaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; EPITAXIAL STRUCTURE; GAN-BASED LIGHT-EMITTING DIODES; LASER FLUENCES; LASER IRRADIATIONS; LASER LIFT-OFF; LASER LIFT-OFF TECHNIQUES; LUMINOUS EFFICIENCY; MINIMUM THICKNESS; ND: YAG; SAPPHIRE SUBSTRATES; SERIES RESISTANCES; THERMAL RESISTANCE; THIRD HARMONIC; VERTICAL STRUCTURES; YTTRIUM ALUMINIUM GARNET;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; NEODYMIUM; OPTIMIZATION; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SILICATE MINERALS; X RAY DIFFRACTION; YTTRIUM;

NEODYMIUM LASERS;

EID: 79955158961     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.041001     Document Type: Article

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