Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O

Journal of Crystal Growth

Volumn 310, Issue 12, 2008, Pages 3024-3028

  Lin, Ping Yuan ^a   Gong, Jyh Rong ^a   Li, Ping Cheng ^a   Lin, Tai Yuan ^b   Lyu, Dong Yuan ^b   Lin, Der Yuh ^c   Lin, Hung Ji ^c   Li, Ta Ching ^d   Chang, Kuo Jen ^d   Lin, Wen Jen ^d  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A1. Surface structure; A1. X ray diffraction; A3. Atomic layer deposition; B1. Zinc oxides; B2. Photoluminescence; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; FILM GROWTH; NITROGEN OXIDES; SAPPHIRE; SURFACE STRUCTURE; X RAY DIFFRACTION; ZINC OXIDE;

DIETHYLZINC (DEZN); NEUTRAL DONOR; SEMICONDUCTING II-VI MATERIALS;

THIN FILMS;

EID: 44149086847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.016     Document Type: Article

References (18)

1. Mang A., Reimann K., and Rübenacke St. Solid State Commun. 94 (1995) 251
2. Kang H.S., Kang J.S., Kim J.W., and Lee S.Y. J. Appl. Phys. 95 (2003) 1246
3. Yu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., and Koinuma H. J. Crystal Growth 184 (1998) 601
4. Chen Y.F., Bagnall D.M., Zhu Z.Q., Sekiuchi T., Park K., Hiraga K., Yao T., Koyama S., Chen M.Y., and Goto T. J. Crystal Growth 181 (1997) 165
5. Huang M.H., Mao S., Feick H., Yan H., Yan Y., Wu Y.Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
6. Gorla C.R., Emanetoglu N.M., liang S., Mayo W.E., Lu Y., Wraback M., and Shen H. J. Appl. Phys. 85 (1999) 2595
7. Studenilin S.A., Golege N., and Cocivera M. J. Appl. Phys. 84 (1998) 2287
8. Kim K.H., Park K.C., and Ma D.Y. J. Appl. Phys. 81 (1997) 7764
9. Gorla C.R., Emanetoglu N.W., liang S., Mayo W.E., Lu Y., Wraback M., and Shen H. J. Appl. Phys. 85 (1999) 2595
10. Jim B.J., Im S., and Lee S.Y. Thin Solid Films 366 (2000) 107
11. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Appl. Phys. Lett. 72 (1998) 3270
12. Saito K., Yamamoto Y., Matsuda A., Izumi S., Uchino T., Ishida K., and Takahashi K. Phys. Stat. Sol. (b) 229 (2002) 925
13. Chang C.Y., and Sze S.M. ULSI Devices (2000), Wiley, New York
14. Lim J., Shin K., Kim H.W., and Lee C. Mater. Sci. Eng. B107 (2004) 301
15. Fons P., Iwata K., Niki S., Yamada A., and Matsuda K. J. Crystal Growth 201 (1999) 627
16. Tatsumi T., Fujita M., Kawamoto N., Sasajima M., and Horikoshi Y. Jpn. J. Appl. Phys. 43 (2004) 2602
17. Dai J., Liu H., Fang W., Wang L., Pu Y., Chen Y., and Jiang F. J. Crystal Growth 283 (2005) 93
18. Ma Y., Du G., Wang X., Li W., Yin J., Qiu D., Song B., Zhang X., and Liu D. Appl. Surf. Sci. 243 (2005) 24