Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films

Materials Research Society Symposium Proceedings

Volumn 1201, Issue , 2010, Pages 35-41

  Look, David C ^a   Ghosh, Kartik ^b   Leedy, Kevin D ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b MISSOURI STATE UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; BOUNDARY SCATTERING; DONOR AND ACCEPTOR; GA-DOPED ZNO; HALL EFFECT MEASUREMENT; SAMPLE THICKNESS; TEMPERATURE DEPENDENT;

DEPOSITION; GALLIUM; IONIZATION OF GASES; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS; ZINC; ZINC OXIDE;

ANNEALING;

EID: 77953978270     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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