Single crystalline quasi aligned one dimensional P-type Cu2O nanowire for improving Schottky barrier characteristics

Materials Letters

Volumn 65, Issue 12, 2011, Pages 1868-1870

  Hafez, M ^a   Al Marzouki, F ^a   Mahmoud, Waleed E ^a,b  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^b Suez Canal University   (Egypt)

Author keywords

Nanowires; Schottky diode; V S growth; Vertically aligned

Indexed keywords

BARRIER HEIGHTS; BULK SEMICONDUCTORS; CHARACTERISTIC CURVE; DEPLETION REGION; DONOR STATE; IDEALITY FACTORS; INTERFACIAL LAYER; P-TYPE; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SCHOTTKY BARRIERS; SCHOTTKY DIODE; SCHOTTKY DIODES; SERIES RESISTANCES; SILICON SUBSTRATES; SINGLE-CRYSTALLINE; SOLID-VAPOR; STRUCTURE AND MORPHOLOGY; V-S GROWTH; VERTICALLY ALIGNED;

COPPER COMPOUNDS; CRYSTALLINE MATERIALS; NANOWIRES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR DIODES;

EID: 79954606846     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.03.093     Document Type: Article

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