Increased metal-insulator transition temperatures in epitaxial thin films of V2 O3 prepared in reduced oxygen environments

Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

  Brockman, J ^a,b   Aetukuri, N P ^a,c   Topuria, T ^a   Samant, M G ^a   Roche, K P ^a   Parkin, S S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; EPITAXIAL THIN FILMS; METAL INSULATOR TRANSITION TEMPERATURE; OXYGEN PLASMAS; OXYGEN PRESSURE; ROOM-TEMPERATURE RESISTIVITY; TRANSITION TEMPERATURE;

EPITAXIAL FILMS; EPITAXIAL GROWTH; METAL INSULATOR BOUNDARIES; OXYGEN; SEMICONDUCTOR INSULATOR BOUNDARIES; STOICHIOMETRY; TEMPERATURE; THERMAL EVAPORATION;

METAL INSULATOR TRANSITION;

EID: 79954590779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3574910     Document Type: Article

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