Influence of strain on the electronic properties of epitaxial V2O3 thin films

Thin Solid Films

Volumn 299, Issue 1-2, 1997, Pages 119-124

  Schuler, H ^a   Klimm, S ^a   Weissmann, G ^a   Renner, C ^a   Horn, S ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Electronic devices; Epitaxy; Strain; Vanadium oxide

Indexed keywords

ELECTRON BEAMS; ELECTRON DEVICES; EPITAXIAL GROWTH; EVAPORATION; SAPPHIRE; STRAIN; VANADIUM COMPOUNDS;

ELECTRON BEAM EVAPORATION; EPITAXIAL FILMS; VANADIUM OXIDE;

THIN FILMS;

EID: 0347244165     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09399-6     Document Type: Article

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