Growth of V2O3 thin films on a-plane (110) and c-plane (001) sapphire via pulsed-laser deposition

Journal of Materials Research

Volumn 22, Issue 10, 2007, Pages 2825-2831

  Allimi, B S ^a   Alpay, S P ^a   Goberman, D ^a   Huang, T ^a   Budnick, J I ^a   Pease, D M ^a   Frenkel, A I ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b YESHIVA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; PULSED LASER DEPOSITION; SAPPHIRE; STOICHIOMETRY; SUBSTRATES; THERMAL EXPANSION; THERMAL STRESS; THIN FILMS; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SAPPHIRE SUBSTRATES; TEMPERATURE RESISTIVITIES; VANADIUM SESQUIOXIDE FILMS;

VANADIUM COMPOUNDS;

EID: 35448959989     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0378     Document Type: Article

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