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Journal of Alloys and Compounds

Volumn 509, Issue 20, 2011, Pages 6102-6105

Influence of annealing on the structural and optical properties of ZnO films grown by MOCVD

(6) Su, Jianfeng a Wang, Changqing a Tang, Chunjuan a Niu, Qiang a Zhang, Yongsheng a Fu, Zhuxi b

a LUOYANG INSTITUTE OF SCIENCE AND TECHNOLOGY (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

Luminescence; Optical properties; Semiconductors; ZnO film

Indexed keywords

ANNEALING TEMPERATURES; DEEP LEVEL; DEFECT EMISSION; DIETHYLZINC; FORMATION ENTHALPY; GREEN EMISSIONS; INTERSTITIAL DEFECTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NITROGEN ATMOSPHERES; OXYGEN ATMOSPHERE; OXYGEN VACANCY DEFECTS; REACTANT GAS; SEMICONDUCTORS; SI (1 1 1); STRUCTURAL AND OPTICAL PROPERTIES; THEORETICAL INVESTIGATIONS; VISIBLE EMISSIONS; ZINC VACANCY; ZNO FILMS;

ANNEALING; CRYSTAL DEFECTS; LUMINESCENCE; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; OXYGEN; OXYGEN VACANCIES; VACANCIES; ZINC OXIDE;

OPTICAL FILMS;

EID: 79954421952 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.03.036 Document Type: Article

Times cited : (20)

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