Modified valence force field approach for phonon dispersion: From zinc-blende bulk to nanowires: Methodology and computational details

Journal of Computational Electronics

Volumn 8, Issue 3-4, 2009, Pages 160-172

  Paul, Abhijeet ^a   Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Dynamical matrix; Nanowire; Phonons; Valence Force Field

Indexed keywords

COMPUTATIONAL DEMANDS; DYNAMICAL MATRIX; LATTICE DYNAMICS; PHONON CALCULATION; PHONON DISPERSIONS; PHONON SPECTRUM; SCALED CMOS; SECTION SIZE; THERMAL PROPERTIES; THERMOELECTRIC SEMICONDUCTOR; VALENCE FORCE FIELD; VALENCE FORCE FIELDS; ZINC-BLENDE; ZINCBLENDE SEMICONDUCTORS;

ACOUSTIC DISPERSION; CRYSTAL LATTICES; DISPERSIONS; NANOWIRES; PHONONS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SOLIDS; STRAIN MEASUREMENT; THERMODYNAMIC PROPERTIES; WIRE; ZINC;

SEMICONDUCTOR DEVICE MODELS;

EID: 79953808875     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: None     Document Type: Article

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