Lattice properties of strained GaAs, Si, and Ge using a modified bond-charge model

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 12, 1996, Pages 7775-7784

  Eryiğit, Resul ^a   Herman, Irving P ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347626222     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7775     Document Type: Article

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