Atomistic modeling of ultrathin surface oxide growth on a ternary alloy: Oxidation of Al-Ni-Fe

Journal of Physical Chemistry C

Volumn 115, Issue 14, 2011, Pages 6571-6580

  Jeon, Byoungseon ^a   Sankaranarayanan, Subramanian K R S ^b   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL ALLOYS; AL-NI-FE ALLOYS; ALUMINUM ATOMS; ALUMINUM OXIDES; AMBIENT TEMPERATURES; ANION SPECIES; ATOMISTIC MODELING; BASE METALS; BULK SUBSTRATES; CHARGE STATE; COORDINATION NUMBER; DENSITY PROFILE; DISORDERED STRUCTURES; DOPANT ATOMS; DOPANT SEGREGATION; ELEVATED TEMPERATURE; FE-AL ALLOYS; HIGH RATE; INITIAL OXIDATION; LAYER-BY LAYER MODE; NICKEL-IRON ALLOYS; OXIDATION AND OXIDES; OXIDE GROWTH; OXIDE KINETICS; OXIDE LAYER; OXYGEN ATOM; OXYGEN EXPOSURE; PURE AL; SURFACE OXIDE; SURFACE OXIDE FILMS; ULTRA-THIN; ULTRA-THIN OXIDE LAYERS;

ALLOYS; ALUMINUM; ATOMS; GROWTH KINETICS; IRON ALLOYS; LEAD OXIDE; MOLECULAR DYNAMICS; OXIDATION; OXIDE FILMS; OXYGEN; POSITIVE IONS; SEGREGATION (METALLOGRAPHY); STOICHIOMETRY;

FILM GROWTH;

EID: 79953761273     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1106845     Document Type: Article

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