Atomistic simulation of field enhanced oxidation of Al (100) beyond the mott potential

Physical Review Letters

Volumn 102, Issue 9, 2009, Pages

  Sankaranarayanan, Subramanian K R S ^a   Kaxiras, Efthimios ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHARGE TRANSFER; CHEMISORPTION; DYNAMICS; ELECTRIC FIELD EFFECTS; ION EXCHANGE; MOLECULAR DYNAMICS; OXIDATION; OXIDE FILMS; OXYGEN; STOICHIOMETRY;

ACTIVATION BARRIERS; APPLIED ELECTRIC FIELDS; ATOMISTIC SIMULATIONS; CHEMISORBED OXYGENS; ELECTROSTATIC POTENTIALS; ION MIGRATIONS; MOLECULAR DYNAMICS SIMULATIONS; MOTT POTENTIALS; OXIDATION-KINETICS; OXIDE GROWTHS; ULTRA-THIN OXIDE FILMS; ULTRA-THIN OXIDES; VACANCY SITES;

ELECTRIC DRIVES;

EID: 63149163694     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.095504     Document Type: Article

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