SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 3, Issue 4, 2011, Pages 1760-1765

Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation

(4) Singh, Nandan a Yan, Chaoyi a Lee, Pooi See a Comini, Elisabetta b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF BRESCIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CHANNEL CONDUCTANCE; CONTACT DEVICE; CURRENT VOLTAGE MEASUREMENT; ELECTRODE JUNCTIONS; HIGH SENSITIVITY; LOW TEMPERATURES; METAL ELECTRODES; METAL-SEMICONDUCTOR JUNCTIONS; NANOWIRE DEVICES; REDUCING GAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SEMICONDUCTING NANOWIRES; SENSING MECHANISM; SENSING PROPERTY; SINGLE NANOWIRES; WORKING CONDITIONS;

FIELD EFFECT TRANSISTORS; GASES; NANOWIRES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR METAL BOUNDARIES;

NANOMATERIAL;

ARTICLE; CHEMISTRY; CLASSIFICATION; CONDUCTOMETRY; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; GAS; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CONDUCTOMETRY; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GASES; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 79953731749 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c0nr00871k Document Type: Article

Times cited : (22)

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