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Volumn 406, Issue 9, 2011, Pages 1653-1659

Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films

Author keywords

Barrier heights; Electrical properties; Growth from solution; IIVI semiconductors; Optical properties

Indexed keywords

AMORPHOUS STRUCTURES; ANNEALING TEMPERATURE EFFECTS; ANNEALING TEMPERATURES; BARRIER HEIGHTS; CHEMICAL BATH DEPOSITION METHODS; DEPOSITED FILMS; DIELECTRIC CONSTANTS; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTIES; ENERGY DISPERSIVE X-RAY; EXTINCTION COEFFICIENT (K); GLASS SUBSTRATES; GROWTH FROM SOLUTION; I - V CURVE; II-VI SEMICONDUCTOR; OHMIC CHARACTERISTICS; OPTICAL ABSORPTION SPECTRUM; OPTICAL AND ELECTRICAL PROPERTIES; POLYCRYSTALLINE; PROBE TECHNIQUE; ROOM TEMPERATURE; SCHOTTKY CONTACTS; ZINC SULFIDE THIN FILMS; ZNS THIN FILMS;

EID: 79953677162     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.12.033     Document Type: Article
Times cited : (98)

References (35)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.