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Volumn 406, Issue 9, 2011, Pages 1653-1659
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Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films
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Author keywords
Barrier heights; Electrical properties; Growth from solution; IIVI semiconductors; Optical properties
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Indexed keywords
AMORPHOUS STRUCTURES;
ANNEALING TEMPERATURE EFFECTS;
ANNEALING TEMPERATURES;
BARRIER HEIGHTS;
CHEMICAL BATH DEPOSITION METHODS;
DEPOSITED FILMS;
DIELECTRIC CONSTANTS;
ELECTRICAL MEASUREMENT;
ELECTRICAL PROPERTIES;
ENERGY DISPERSIVE X-RAY;
EXTINCTION COEFFICIENT (K);
GLASS SUBSTRATES;
GROWTH FROM SOLUTION;
I - V CURVE;
II-VI SEMICONDUCTOR;
OHMIC CHARACTERISTICS;
OPTICAL ABSORPTION SPECTRUM;
OPTICAL AND ELECTRICAL PROPERTIES;
POLYCRYSTALLINE;
PROBE TECHNIQUE;
ROOM TEMPERATURE;
SCHOTTKY CONTACTS;
ZINC SULFIDE THIN FILMS;
ZNS THIN FILMS;
ABSORPTION SPECTROSCOPY;
AMORPHOUS FILMS;
ANNEALING;
DEPOSITION;
DIFFRACTION;
HETEROJUNCTIONS;
LIGHT ABSORPTION;
OPTICAL CONSTANTS;
RAMAN SPECTROSCOPY;
REFRACTIVE INDEX;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
THIN FILMS;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
X RAYS;
ZINC SULFIDE;
ELECTRIC PROPERTIES;
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EID: 79953677162
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2010.12.033 Document Type: Article |
Times cited : (98)
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References (35)
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