SCOPUS 정보 검색 플랫폼

Ultramicroscopy

Volumn 105, Issue 1-4, 2005, Pages 275-280

Photoelectric effect and transport properties of a single CdS nanoribbon

(8) Chen, J a,b Xue, K a An, J a Tsang, S W a Ke, N a Xu, J B a Li, Quan a Wang, C R a

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b SUN YAT SEN UNIVERSITY (China)

Author keywords

CdS nanoribbon; Excitation; Photoelectric effect; Strain; Surface

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM SULFIDE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LITHOGRAPHY; MASKS; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

CDS NANORIBBON; EXCITATION; PHOTOELECTRIC DETECTORS; SCHOTTKY CONTACT;

NANOSTRUCTURED MATERIALS;

NANOPARTICLE;

ATOMIC FORCE MICROSCOPY; CONFERENCE PAPER; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTROCHEMISTRY; MORPHOLOGY; PHOTOCHEMISTRY; POTENTIOMETRY; RAMAN SPECTROMETRY; SEMICONDUCTOR; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 27544483967 PISSN: 03043991 EISSN: None Source Type: Journal
DOI: 10.1016/j.ultramic.2005.06.049 Document Type: Conference Paper

Times cited : (20)

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