Photoconductive semiconductor switch based on ZnS nanobelts film

Sensors and Actuators, B: Chemical

Volumn 147, Issue 2, 2010, Pages 442-446

  Zheng, X J ^a   Chen, Y Q ^a   Zhang, T ^b   Yang, B ^a   Jiang, C B ^c   Yuan, B ^a   Zhu, Z ^a  

^a XIANGTAN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

^c INSTITUTE OF METAL RESEARCH   (China)

Author keywords

Photoconductive; Semiconductor switch; UV light; ZnS nanobelts

Indexed keywords

CIRCUIT STATE; CURRENT VOLTAGE CURVE; DECAY TIME; FAST RESPONSE; HIGH VOLTAGE; LOW-LEAKAGE CURRENT; OXYGEN CHEMISORPTION; PHOTOCONDUCTIVE PROPERTIES; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; RESPONSE TIME; RISETIMES; STATE CONVERSION; SURFACE-TO-VOLUME RATIO; TEST CIRCUIT; ULTRAVIOLET LIGHTS; UV ILLUMINATIONS; UV-LIGHT;

CHEMISORPTION; ELECTRIC SWITCHGEAR; NANOBELTS; OXYGEN; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTOR SWITCHES;

ZINC SULFIDE;

EID: 77953130640     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2010.04.010     Document Type: Article

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