Influences of copper and manganese concentrations on the properties of polycrystalline ZnS:Cu and ZnS:Mn thin films

Journal of Optoelectronics and Advanced Materials

Volumn 11, Issue 4, 2009, Pages 429-436

  Gode F ^a   Gumus C ^b  

^a MEHMET AKIF ERSOY UNIVERSITY   (Turkey)

^b CUKUROVA UNIVERSITY   (Turkey)

Author keywords

Optical absorption; Thin films; XRD; ZnS:Cu; ZnS:Mn

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COPPER METALLOGRAPHY; DEPOSITION; ELECTRIC CONDUCTIVITY; II-VI SEMICONDUCTORS; LIGHT ABSORPTION; MANGANESE COMPOUNDS; MANGANESE METALLOGRAPHY; OXIDE MINERALS; SUBSTRATES; SULFUR COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

ANNEALING PROCESS; ANNEALING TEMPERATURES; CHEMICAL-BATH DEPOSITION; ELECTRICAL CONDUCTIVITY; MANGANESE CONCENTRATION; PREFERENTIAL ORIENTATION; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

OPTICAL FILMS;

EID: 75949110135     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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