Dielectric behavior of bilayer films of P(VDF-CTFE) and low temperature PECVD fabricated Si3N4

IEEE Transactions on Dielectrics and Electrical Insulation

Volumn 18, Issue 2, 2011, Pages 463-470

  Zhou, Xin ^a   Chen, Qin ^a   Zhang, Q M ^a   Zhang, Shihai ^b  

^a The Pennsylvania State University   (United States)

^b Strategic Polymer Sciences Inc   (United States)

Author keywords

conduction loss; dielectric multilayer; energy storage; PECVD; Polymer thin film capacitor

Indexed keywords

BI-LAYER; BI-LAYER FILMS; CONDUCTION LOSS; DIELECTRIC BEHAVIOR; DIELECTRIC CONSTANTS; DIELECTRIC LAYER; DIELECTRIC MULTILAYER; ENERGY DENSITY; FILM FABRICATION; HIGH ELECTRIC FIELDS; HIGH ENERGY DENSITIES; HIGH RESISTIVITY; LOW DIELECTRIC LOSS; LOW TEMPERATURES; PECVD; POLYMER THIN FILM CAPACITOR; REDUCED LOSS; VINYLIDENE FLUORIDE;

CAPACITORS; DIELECTRIC LOSSES; ELECTRIC FIELDS; ENERGY STORAGE; FILM PREPARATION; FLYWHEELS; MAGNETIC FILMS; MULTILAYERS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASTIC FILMS; POLYMERIC FILMS; SILICON; THIN FILM CIRCUITS;

VAPOR DEPOSITION;

EID: 79953662877     PISSN: 10709878     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDEI.2011.5739450     Document Type: Article

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